s16asd2 ... s16msd2 s16asd2 ... s16msd2 surface mount silicon rectifier diodes C half bridge silizium-gleichrichterdioden fr die oberfl?chenmontage C halbbrcke version 2010-09-22 dimensions - ma?e [mm] nominal current nennstrom 16 a repetitive peak reverse voltage periodische spitzensperrspannung 50...1000 v plastic case kunststoffgeh?use to-263ab d 2 pak weight approx. gewicht ca. 1.6 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging in tubes standard lieferform in stangen maximum ratings and characteristics grenz- und kennwerte type typ repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] 1 ) surge peak reverse voltage sto?spitzensperrspannung v rsm [v] 1 ) forward voltage durchlass-spannung v f [v] 1 ), t j = 25c i f = 5 a i f = 8 a s16asd2 50 50 < 1.0 < 1.1 s16bsd2 100 100 < 1.0 < 1.1 s16dsd2 200 200 < 1.0 < 1.1 S16GSD2 400 400 < 1.0 < 1.1 s16jsd2 600 600 < 1.0 < 1.1 s16ksd2 800 800 < 1.0 < 1.1 s16msd2 1000 1000 < 1.0 < 1.1 max. average forward current, r-load dauergrenzstrom mit r-last t c = 100c t c = 100c i fav i fav 8 a 1 ) 16 a 2 ) repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 30 a 3 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 135/150 a 1 ) rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 90 a 2 s 1 ) junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+175c 1 per diode C pro diode 2 output current when operating two devices in a full bridge configuration ausgangsstrom bei betrieb zweier bauteile als vollbrcke 3 max. temperature of the case t c = 100c C max. temperatur des geh?uses t c = 100c ? diotec semiconductor ag http://www.diotec.com/ 1 1 2 3 4 0.4 4.5 0.2 1.2 5.08 0.8 1.3 1 type typ 3 2 4 10.25 0.5
s16asd2 ... s16msd2 characteristics kennwerte leakage current sperrstrom t j = 25c v r = v rrm i r < 10 a thermal resistance junction to case w?rme widerstand sperrschicht C geh?use r thc < 2.5 k/w 1 ) 1 per diode C pro diode 2 http://www.diotec.com/ ? diotec semiconductor ag rated forward current vs. temp. of the case in abh. v. d. geh?usetemperatur zul. richtstrom 120 100 80 60 40 20 0 i fav [%] [c] t c 150 100 50 0 10 10 1 10 10 2 -1 -2 [a] i f forward characteristics (typical values) durchlasskennlinien (typische werte) 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 t = 25c j t = 125c j 200a-(5a-0.95v)
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